Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering

标题
Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering
作者
关键词
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出版物
ACS Applied Materials & Interfaces
Volume 6, Issue 20, Pages 17686-17693
出版商
American Chemical Society (ACS)
发表日期
2014-10-06
DOI
10.1021/am504004v

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