Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

标题
Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors
作者
关键词
-
出版物
LANGMUIR
Volume 29, Issue 23, Pages 7143-7150
出版商
American Chemical Society (ACS)
发表日期
2013-05-22
DOI
10.1021/la401356u

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