Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors

标题
Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
作者
关键词
-
出版物
Journal of Materials Chemistry C
Volume 2, Issue 31, Pages 6395-6401
出版商
Royal Society of Chemistry (RSC)
发表日期
2014-06-05
DOI
10.1039/c4tc00709c

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