Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

(2015) Niraj Man Shrestha et al.   VACUUM

Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer

(2014) Niraj Man Shrestha et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

(2014) P Kruszewski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

(2013) Zhongda Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

(2013) Srabanti Chowdhury et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Is self-heating responsible for the current collapse in GaN HEMTs?

(2012) Balaji Padmanabhan et al.   Journal of Computational Electronics

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

(2011) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

(2010) Masaya Okada et al.   Applied Physics Express

Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications

(2010) Kartika Chandra Sahoo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching

(2009) R. Dylewicz et al.   JOURNAL OF ELECTRONIC MATERIALS

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

(2008) Hirotaka Otake et al.   Applied Physics Express

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

(2008) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS