Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications
出版年份 2017 全文链接
标题
Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications
作者
关键词
Zinc, Semiconductors, Copper, Electronic properties, Electrostatics, Oxygen, Atomic force microscopy, Chemical vapor deposition
出版物
PLoS One
Volume 12, Issue 1, Pages e0171050
出版商
Public Library of Science (PLoS)
发表日期
2017-01-31
DOI
10.1371/journal.pone.0171050
参考文献
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