期刊
APPLIED PHYSICS LETTERS
卷 98, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3525170
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资金
- EU [SMASH CP-IP 228999-2]
The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al2O3 (0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525170]
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