Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN
出版年份 2011 全文链接
标题
Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 84, Issue 7, Pages -
出版商
American Physical Society (APS)
发表日期
2011-08-10
DOI
10.1103/physrevb.84.075315
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
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- Phonon polariton of InN observed by infrared synchrotron radiation
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- Effects of dislocations on electron transport in wurtzite InN
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- Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence
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- Investigation on the structural origin of n-type conductivity in InN films
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- Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
- (2008) J. W. Ager et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
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