Electron cyclotron effective mass in indium nitride

Abnormal magnetic-field dependence of Hall coefficient in InN epilayers

(2009) T. A. Komissarova et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Carrier mass measurements in degenerate indium nitride

(2009) G. Pettinari et al.   PHYSICAL REVIEW B

Optical Hall Effect in Hexagonal InN

(2008) T. Hofmann et al.   JOURNAL OF ELECTRONIC MATERIALS

Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

(2008) I. Gherasoiu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B