标题
Highly stable thin film transistors using multilayer channel structure
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 10, Pages 103505
出版商
AIP Publishing
发表日期
2015-03-13
DOI
10.1063/1.4914971
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors
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