Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

标题
Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 21, Pages 213504
出版商
AIP Publishing
发表日期
2015-11-26
DOI
10.1063/1.4936376

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now