On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

(2014) Tsung-Jui Yang et al.   JOURNAL OF APPLIED PHYSICS

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

(2014) Sergey Karpov   OPTICAL AND QUANTUM ELECTRONICS

Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region

(2014) Garam Kim et al.   OPTICS EXPRESS

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

(2014) Friedhard Römer et al.   OPTICS EXPRESS

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

(2014) Marco Calciati et al.   AIP Advances

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

(2013) Bastian Galler et al.   Applied Physics Express

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

(2013) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

(2013) Richard P. Green et al.   APPLIED PHYSICS LETTERS

Sensitivity analysis of electron leakage in III-nitride light-emitting diodes

(2013) Joachim Piprek et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Auger carrier leakage in III-nitride quantum-well light emitting diodes

(2012) Marcus Deppner et al.   Physica Status Solidi-Rapid Research Letters

Effect of active QW population on optical characteristics of polar, semipolar and nonpolar III-nitride light emitters

(2012) Mikhail V Kisin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Recombination coefficients of GaN-based laser diodes

(2011) W. G. Scheibenzuber et al.   JOURNAL OF APPLIED PHYSICS

Second-order piezoelectricity in wurtzite III-N semiconductors

(2011) Joydeep Pal et al.   PHYSICAL REVIEW B

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS