Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure

标题
Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure
作者
关键词
-
出版物
International Journal of Nanotechnology
Volume 11, Issue 1/2/3/4, Pages 126
出版商
Inderscience Publishers
发表日期
2014-03-15
DOI
10.1504/ijnt.2014.059816

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