标题
Characteristics and mechanism study of cerium oxide based random access memories
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 17, Pages 173108
出版商
AIP Publishing
发表日期
2015-04-30
DOI
10.1063/1.4919442
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Resistive switching characteristics of Pt/CeOx/TiN memory device
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