Deep-to-shallow level transition of Re and Nb dopants in monolayerMoS2with dielectric environments

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

(2014) Yung-Chang Lin et al.   ADVANCED MATERIALS

p-type doping of MoS2 thin films using Nb

(2014) Masihhur R. Laskar et al.   APPLIED PHYSICS LETTERS

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

(2014) Miguel M. Ugeda et al.   NATURE MATERIALS

Electrostatics-based finite-size corrections for first-principles point defect calculations

(2014) Yu Kumagai et al.   PHYSICAL REVIEW B

Stability and electronic structures of native defects in single-layerMoS2

(2014) Ji-Young Noh et al.   PHYSICAL REVIEW B

Charged Point Defects in the Flatland: Accurate Formation Energy Calculations in Two-Dimensional Materials

(2014) Hannu-Pekka Komsa et al.   Physical Review X

Charge Scattering and Mobility in Atomically Thin Semiconductors

(2014) Nan Ma et al.   Physical Review X

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Possible doping strategies for MoS2monolayers: Anab initiostudy

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States

(2013) Diana Y. Qiu et al.   PHYSICAL REVIEW LETTERS

Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces

(2013) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Finite-size supercell correction schemes for charged defect calculations

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS