Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
出版年份 2014 全文链接
标题
Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
作者
关键词
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出版物
ADVANCED MATERIALS
Volume 26, Issue 18, Pages 2857-2861
出版商
Wiley
发表日期
2014-02-25
DOI
10.1002/adma.201304985
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Control of Radiation Damage in MoS2 by Graphene Encapsulation
- (2013) Recep Zan et al. ACS Nano
- Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
- (2013) Jiadan Lin et al. APPLIED PHYSICS LETTERS
- Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
- (2013) Wu Zhou et al. NANO LETTERS
- Ion Implantation of Graphene—Toward IC Compatible Technologies
- (2013) U. Bangert et al. NANO LETTERS
- Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS2 via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties
- (2013) T. S. Sreeprasad et al. NANO LETTERS
- Dynamics of Single Fe Atoms in Graphene Vacancies
- (2013) Alex W. Robertson et al. NANO LETTERS
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Direct visualization of reversible dynamics in a Si6 cluster embedded in a graphene pore
- (2013) Jaekwang Lee et al. Nature Communications
- Visualization and quantification of transition metal atomic mixing in Mo1−xW x S2 single layers
- (2013) Dumitru O Dumcenco et al. Nature Communications
- Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy
- (2012) Quentin M. Ramasse et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Range-Separated Approach to the RPA Correlation Applied to the van der Waals Bond and to Diffusion of Defects
- (2012) Fabien Bruneval PHYSICAL REVIEW LETTERS
- Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW LETTERS
- Direct Determination of the Chemical Bonding of Individual Impurities in Graphene
- (2012) Wu Zhou et al. PHYSICAL REVIEW LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Band-gap transition induced by interlayer van der Waals interaction in MoS2
- (2011) S. W. Han et al. PHYSICAL REVIEW B
- High Lubricity of Re-Doped Fullerene-Like MoS2 Nanoparticles
- (2011) L. Rapoport et al. TRIBOLOGY LETTERS
- Comparative atomic-scale analysis of promotional effects by late 3d-transition metals in MoS2 hydrotreating catalysts
- (2010) Jakob Kibsgaard et al. JOURNAL OF CATALYSIS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Graphene Oxide: Structural Analysis and Application as a Highly Transparent Support for Electron Microscopy
- (2009) Neil R. Wilson et al. ACS Nano
- Fullerene-like Mo(W)1−xRexS2Nanoparticles
- (2008) Francis Leonard Deepak et al. Chemistry-An Asian Journal
- Optical properties of tungsten disulfide single crystals doped with gold
- (2008) D.O. Dumcenco et al. MATERIALS CHEMISTRY AND PHYSICS
- Ab initiostudy of bilateral doping within theMoS2-NbS2system
- (2008) Viktoria V. Ivanovskaya et al. PHYSICAL REVIEW B
- Doping Graphene with Metal Contacts
- (2008) G. Giovannetti et al. PHYSICAL REVIEW LETTERS
- Molecular Doping of Graphene
- (2007) T. O. Wehling et al. NANO LETTERS
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