Effect of strain on the electronic and optical properties of Ge–Si dome shaped nanocrystals

Spatially resolving valley quantum interference of a donor in silicon

(2014) J. Salfi et al.   NATURE MATERIALS

Controlling Light Absorption in Charge-Separating Core/Shell Semiconductor Nanocrystals

(2013) Rekha Mahadevu et al.   ACS Nano

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

(2013) Ying Yu et al.   NANO LETTERS

Atomistic modeling of metallic nanowires in silicon

(2013) Hoon Ryu et al.   Nanoscale

Disorder-induced valley-orbit hybrid states in Si quantum dots

(2013) John King Gamble et al.   PHYSICAL REVIEW B

Charge Relaxation in a Single-ElectronSi/SiGeDouble Quantum Dot

(2013) K. Wang et al.   PHYSICAL REVIEW LETTERS

Spin readout and addressability of phosphorus-donor clusters in silicon

(2013) H. Büch et al.   Nature Communications

A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

(2013) Amro Alkhatib et al.   Scientific Reports

Investigation of the open-circuit voltage in solar cells doped with quantum dots

(2013) Takeshi Tayagaki et al.   Scientific Reports

Formation of coupled three-dimensional GeSi quantum dot crystals

(2012) Y. J. Ma et al.   APPLIED PHYSICS LETTERS

Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores

(2012) Mahesh R. Neupane et al.   JOURNAL OF APPLIED PHYSICS

Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots

(2012) Takeshi Tayagaki et al.   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

(2012) Hoon Ryu et al.   MATHEMATICAL AND COMPUTER MODELLING

Misfit-Guided Self-Organization of Anticorrelated Ge Quantum Dot Arrays on Si Nanowires

(2012) Soonshin Kwon et al.   NANO LETTERS

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires

(2012) Xin Yan et al.   NANO LETTERS

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

(2012) Muhammad Usman et al.   NANOTECHNOLOGY

Coherent singlet-triplet oscillations in a silicon-based double quantum dot

(2012) B. M. Maune et al.   NATURE

Electro-optofluidics: achieving dynamic control on-chip

(2012) Mohammad Soltani et al.   OPTICS EXPRESS

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

(2012) P. Klenovský et al.   PHYSICAL REVIEW B

Ellipsometry and spectroscopy on 1.55μm emitting Ge islands in Si for photonic applications

(2012) V. M. Lavchiev et al.   PHYSICAL REVIEW B

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

(2012) James T. Teherani et al.   PHYSICAL REVIEW B

Ohm's Law Survives to the Atomic Scale

(2012) B. Weber et al.   SCIENCE

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

(2012) Vladimir A Yuryev et al.   Nanoscale Research Letters

Luminescence decay dynamics of self-assembled germanium islands in silicon

(2011) B. Julsgaard et al.   APPLIED PHYSICS LETTERS

In situ x-ray study of the formation of defects in Ge islands on Si(001)

(2011) M.-I. Richard et al.   APPLIED PHYSICS LETTERS

Evolution of self-assembled Ge/Si island grown by ion beam sputtering deposition

(2011) Jie Yang et al.   APPLIED SURFACE SCIENCE

In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots

(2011) Muhammad Usman   JOURNAL OF APPLIED PHYSICS

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

(2011) B. Cho et al.   JOURNAL OF APPLIED PHYSICS

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

(2011) Muhammad Usman et al.   JOURNAL OF APPLIED PHYSICS

Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals

(2011) Mahesh R. Neupane et al.   JOURNAL OF APPLIED PHYSICS

Intermixing during Ripening in Ge–Si Incoherent Epitaxial Nanocrystals

(2011) Marina S. Leite et al.   Journal of Physical Chemistry C

Formation Mechanism of Self-Assembled Ge∕Si∕Ge Composite Islands

(2011) Sheng-Wei Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

(2011) Muhammad Usman et al.   NANOTECHNOLOGY

Nanometer-scale mapping of the strain and Ge content of Ge/Si quantum dots using enhanced Raman scattering by the tip of an atomic force microscope

(2011) Y. Ogawa et al.   PHYSICAL REVIEW B

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

(2011) M. V. Shaleev et al.   SEMICONDUCTORS

$\hbox{TiSi}_{2}$ Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory

(2010) Huimei Zhou et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

(2010) Xiao-Jie Hao et al.   NANO LETTERS

Ge/Si(100) quantum dots grown via a thin Sb layer

(2010) Alexander Tonkikh et al.   Physica Status Solidi-Rapid Research Letters

Theory of valley-orbit coupling in a Si/SiGe quantum dot

(2010) Mark Friesen et al.   PHYSICAL REVIEW B

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

(2010) Z F Krasilnik et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

(2010) Abhijeet Paul et al.   Journal of Computational Electronics

Revealing Quantitative 3D Chemical Arrangement on Ge−Si Nanostructures

(2009) Luciano A. Montoro et al.   Journal of Physical Chemistry C

Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

(2009) Giovanni Pizzi et al.   NANOTECHNOLOGY

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

(2009) Rajib Rahman et al.   PHYSICAL REVIEW B

Kinetic frustration of Ostwald ripening in Ge/Si(100) hut ensembles

(2009) Michael R. McKay et al.   SOLID STATE COMMUNICATIONS

Composition redistribution of self-assembled Ge islands on Si (001) during annealing

(2009) S.W. Lee et al.   THIN SOLID FILMS

Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge[sub 1−x]Si[sub x]∕Si heteronanocrystals

(2008) Jin Lu et al.   APPLIED PHYSICS LETTERS

Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain

(2008) Andrew M. Smith et al.   Nature Nanotechnology

Spin resonance of electrons localized onGe∕Siquantum dots

(2008) A. F. Zinovieva et al.   PHYSICAL REVIEW B

Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

(2008) M. Naumov et al.   Journal of Computational Electronics