期刊
PHYSICAL REVIEW B
卷 83, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.081302
关键词
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资金
- MEXT, Japan
- Tokyo Institute of Technology
- Grants-in-Aid for Scientific Research [22340077] Funding Source: KAKEN
Tip-enhanced Raman spectra of as-grown self-assembled Ge/Si quantum dots have been obtained with nanoscale spatial resolution. It is found that Ge-Ge and Si-Ge modes in the Raman spectra are significantly enhanced only when the atomic force microscope tip with a gold nanoparticle is positioned on the dots. It is also found that the Si substrate peak at 520 cm(-1) is shifted considerably in the neighborhood of the dots. This implies that a large stress acts on the Si substrate around the dots. The Ge content reduces at the center of the dots. This result suggests that the dots consist of a Si-rich core and a Ge-rich shell. The Ge content decreases and the strain in the Si substrate increases with an increase in the dot height.
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