Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

标题
Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
作者
关键词
-
出版物
SEMICONDUCTORS
Volume 45, Issue 2, Pages 198-202
出版商
Pleiades Publishing Ltd
发表日期
2011-02-20
DOI
10.1134/s1063782611020199

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