期刊
PHYSICAL REVIEW B
卷 88, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.035310
关键词
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资金
- ARO
- LPS [W911NF-12-0607]
- US Department of Defense
Quantum dots in silicon are promising candidates for the implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we present a systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridization effects that are detrimental for storing quantum information in the valley degree of freedom, including nonvanishing dipole matrix elements between valley states and altered intervalley tunneling.
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