标题
Extending group-III nitrides to the infrared: Recent advances in InN
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 252, Issue 5, Pages 1050-1062
出版商
Wiley
发表日期
2015-01-30
DOI
10.1002/pssb.201451628
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
- (2014) Binh Huy Le et al. APPLIED PHYSICS LETTERS
- Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
- (2014) Martin Martens et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- RF Performance and Avalanche Breakdown Analysis of InN Tunnel FETs
- (2014) Krishnendu Ghosh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of Mg doping on the structural and free-charge carrier properties of InN films
- (2014) M.-Y. Xie et al. JOURNAL OF APPLIED PHYSICS
- Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg
- (2014) L. H. Dmowski et al. JOURNAL OF APPLIED PHYSICS
- Photoinduced Conversion of Methane into Benzene over GaN Nanowires
- (2014) Lu Li et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting
- (2014) M. G. Kibria et al. Nature Communications
- Surface states and electronic structure of polar and nonpolar InN – An in situ photoelectron spectroscopy study
- (2013) A. Eisenhardt et al. APPLIED PHYSICS LETTERS
- Photoluminescence properties of Mg-doped InN nanowires
- (2013) Songrui Zhao et al. APPLIED PHYSICS LETTERS
- Probing the electrical transport properties of intrinsic InN nanowires
- (2013) S. Zhao et al. APPLIED PHYSICS LETTERS
- Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
- (2013) S. Schöche et al. JOURNAL OF APPLIED PHYSICS
- Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy
- (2013) Jörg Schörmann et al. JOURNAL OF APPLIED PHYSICS
- Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters
- (2013) R. Smith et al. NANO LETTERS
- On-Chip Optical Interconnects Made with Gallium Nitride Nanowires
- (2013) Matt D. Brubaker et al. NANO LETTERS
- p-Type InN Nanowires
- (2013) S. Zhao et al. NANO LETTERS
- Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy
- (2013) S. Zhao et al. Nanoscale
- Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
- (2013) Lin Zhou et al. PHYSICAL REVIEW B
- An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis
- (2013) Naveed ul Hassan Alvi et al. SENSORS
- Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 $\mu$m
- (2012) Katsumi Kishino et al. Applied Physics Express
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- (2012) Xinqiang Wang et al. Applied Physics Express
- Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
- (2012) Shulong Wang et al. APPLIED PHYSICS LETTERS
- Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities
- (2012) L. H. Dmowski et al. JOURNAL OF APPLIED PHYSICS
- Charge transport and trap characterization in individual GaSb nanowires
- (2012) Wei Xu et al. JOURNAL OF APPLIED PHYSICS
- Tuning the Surface Charge Properties of Epitaxial InN Nanowires
- (2012) S. Zhao et al. NANO LETTERS
- Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study
- (2012) S Zhao et al. NANOTECHNOLOGY
- The role of extended defects on the performance of optoelectronic devices in nitride semiconductors
- (2012) Theodore D. Moustakas PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Non-polar group-III nitride semiconductor surfaces
- (2012) Holger Eisele et al. Physica Status Solidi-Rapid Research Letters
- Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
- (2012) S. Zhao et al. PHYSICAL REVIEW B
- Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer
- (2012) Oliver Bierwagen et al. PHYSICAL REVIEW B
- Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants
- (2012) W. M. Linhart et al. PHYSICAL REVIEW LETTERS
- InN doped with Zn: Bulk and surface investigation from first principles
- (2012) Jianli Wang et al. SOLID STATE COMMUNICATIONS
- InGaN Solar Cells: Present State of the Art and Important Challenges
- (2012) Ashraful Ghani Bhuiyan et al. IEEE Journal of Photovoltaics
- Direct measurement of the band gap and Fermi level position at InN(112¯0)
- (2011) Ph. Ebert et al. APPLIED PHYSICS LETTERS
- Is electron accumulation universal at InN polar surfaces?
- (2011) APPLIED PHYSICS LETTERS
- Mg doped InN and confirmation of free holes in InN
- (2011) K. Wang et al. APPLIED PHYSICS LETTERS
- Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
- (2011) L. Geelhaar et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires
- (2011) B. S. Simpkins et al. JOURNAL OF APPLIED PHYSICS
- Electrical and optical properties of p-type InN
- (2011) Marie A. Mayer et al. JOURNAL OF APPLIED PHYSICS
- Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
- (2011) Qiming Li et al. OPTICS EXPRESS
- Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy
- (2011) Jessica H. Chai et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities
- (2010) X. Q. Wang et al. APPLIED PHYSICS LETTERS
- Surface, bulk, and interface electronic properties of nonpolar InN
- (2010) W. M. Linhart et al. APPLIED PHYSICS LETTERS
- Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction
- (2010) N. Ma et al. APPLIED PHYSICS LETTERS
- Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
- (2010) R. Cuscó et al. APPLIED PHYSICS LETTERS
- GaN Nanowires Grown by Molecular Beam Epitaxy
- (2010) Kris A. Bertness et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Observation of Space-Charge-Limited Transport in InAs Nanowires
- (2010) A M Katzenmeyer et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Hole transport and photoluminescence in Mg-doped InN
- (2010) N. Miller et al. JOURNAL OF APPLIED PHYSICS
- GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
- (2010) N. Sofikiti et al. MATERIALS LETTERS
- In situanalysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires
- (2010) M Knelangen et al. NANOTECHNOLOGY
- Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
- (2010) E O Schäfer-Nolte et al. NANOTECHNOLOGY
- Nanowire transistors without junctions
- (2010) Jean-Pierre Colinge et al. Nature Nanotechnology
- Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
- (2010) Akihiko Yoshikawa et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Controlling the conductivity of InN
- (2010) C. G. Van de Walle et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
- (2010) J. Segura-Ruiz et al. PHYSICAL REVIEW B
- 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
- (2009) Yohei Enya et al. Applied Physics Express
- Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
- (2009) G. F. Brown et al. APPLIED PHYSICS LETTERS
- Low-field and high-field electron transport in zinc blende InN
- (2009) V. M. Polyakov et al. APPLIED PHYSICS LETTERS
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
- (2009) M.H. Crawford IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Deep-Ultraviolet Light-Emitting Diodes
- (2009) Michael S. Shur et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration
- (2009) M. E. Holtz et al. JOURNAL OF APPLIED PHYSICS
- When group-III nitrides go infrared: New properties and perspectives
- (2009) Junqiao Wu JOURNAL OF APPLIED PHYSICS
- Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface
- (2009) Florian Werner et al. NANO LETTERS
- Electrical transport properties of single undoped and n-type doped InN nanowires
- (2009) T Richter et al. NANOTECHNOLOGY
- Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)
- (2009) Yi-Lu Chang et al. NANOTECHNOLOGY
- 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
- (2009) Hideki Hirayama et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Structures and electronic states of Mg incorporated into InN surfaces: First-principles pseudopotential calculations
- (2009) Toru Akiyama et al. PHYSICAL REVIEW B
- Diameter-dependent dopant location in silicon and germanium nanowires
- (2009) P. Xie et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Novel semiconductor materials for the development of chemical sensors and biosensors: A review
- (2008) Nikos Chaniotakis et al. ANALYTICA CHIMICA ACTA
- Infrared analysis of hole properties of Mg-doped p-type InN films
- (2008) Masayuki Fujiwara et al. APPLIED PHYSICS LETTERS
- Intense terahertz emission from a-plane InN surface
- (2008) H. Ahn et al. APPLIED PHYSICS LETTERS
- On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
- (2008) Jelena Ristić et al. JOURNAL OF CRYSTAL GROWTH
- Ultraviolet light-emitting diodes based on group three nitrides
- (2008) Asif Khan et al. Nature Photonics
- A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
- (2008) Harumasa Yoshida et al. Nature Photonics
- Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
- (2008) E. Dimakis et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
- (2008) J. W. Ager et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
- (2008) Martin Feneberg et al. PHYSICAL REVIEW B
- Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
- (2008) L. F. J. Piper et al. PHYSICAL REVIEW B
- Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
- (2008) P. D. C. King et al. PHYSICAL REVIEW B
- Strain relaxation and band-gap tunability in ternaryInxGa1−xNnanowires
- (2008) H. J. Xiang et al. PHYSICAL REVIEW B
- Stabilization of Bulkp-Type and Surfacen-Type Carriers in Mg-Doped InN{0001}Films
- (2008) Jung-Hwan Song et al. PHYSICAL REVIEW LETTERS
- Unusually Strong Space-Charge-Limited Current in Thin Wires
- (2008) A. Alec Talin et al. PHYSICAL REVIEW LETTERS
- Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
- (2008) P. D. C. King et al. PHYSICAL REVIEW LETTERS
- Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces
- (2008) Chung-Lin Wu et al. PHYSICAL REVIEW LETTERS
- Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires
- (2008) Toma Stoica et al. Small
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search