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(2012) Max Shatalov et al.   Applied Physics Express

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

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(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

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(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Intermixing and chemical structure at the interface between n-GaN and V-based contacts

(2008) S. Pookpanratana et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics