Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started