Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors

标题
Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
作者
关键词
-
出版物
出版商
Wiley
发表日期
2015-05-26
DOI
10.1002/pssa.201532328

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