In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells
出版年份 2014 全文链接
标题
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 20, Pages 204509
出版商
AIP Publishing
发表日期
2014-05-29
DOI
10.1063/1.4879678
参考文献
相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。- Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
- (2012) F. De Stefano et al. APPLIED PHYSICS LETTERS
- In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy
- (2012) Thomas Bertaud et al. APPLIED PHYSICS LETTERS
- Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
- (2012) M. Sowinska et al. APPLIED PHYSICS LETTERS
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
- (2012) Federico Nardi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures
- (2012) Xavier Cartoixà et al. PHYSICAL REVIEW B
- Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films
- (2011) Erwin Hildebrandt et al. APPLIED PHYSICS LETTERS
- Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
- (2011) Kuyyadi P. Biju et al. APPLIED PHYSICS LETTERS
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
- (2011) Daniele Ielmini IEEE TRANSACTIONS ON ELECTRON DEVICES
- Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy
- (2011) P. Calka et al. JOURNAL OF APPLIED PHYSICS
- Metal oxide resistive memory switching mechanism based on conductive filament properties
- (2011) G. Bersuker et al. JOURNAL OF APPLIED PHYSICS
- Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films
- (2009) Keisuke Shibuya et al. ADVANCED MATERIALS
- Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
- (2009) Qi Liu et al. APPLIED PHYSICS LETTERS
- The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors
- (2008) Bing Miao et al. JOURNAL OF APPLIED PHYSICS
- Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
- (2008) Ch. Wenger et al. MICROELECTRONIC ENGINEERING
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More