Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

Ab initio density functional theory study of non-polar (101¯0), (112¯0) and semipolar {202¯1} GaN surfaces

(2014) P. Mutombo et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

(2013) A. L. Yang et al.   APPLIED PHYSICS LETTERS

GaN polarity determination by photoelectron diffraction

(2013) O. Romanyuk et al.   APPLIED PHYSICS LETTERS

Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy

(2013) Daiki Jinno et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ga-polar GaN nanocolumn arrays with semipolar faceted tips

(2013) A Urban et al.   NEW JOURNAL OF PHYSICS

Polarity-dependent photoemission spectra of wurtzite-type zinc oxide

(2012) Jesse Williams et al.   APPLIED PHYSICS LETTERS

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

(2012) Yoshinobu Kawaguchi et al.   APPLIED PHYSICS LETTERS

Layer-resolved photoelectron diffraction from Si(001) and GaAs(001)

(2012) I. Bartoš et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

(2012) A Wierzbicka et al.   NANOTECHNOLOGY

Direct experimental determination of the spontaneous polarization of GaN

(2012) Jonas Lähnemann et al.   PHYSICAL REVIEW B

Semipolar GaN grown on foreign substrates: a review

(2012) F Scholz   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction

(2012) O. Romanyuk et al.   SURFACE SCIENCE

Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells

(2011) Chia-Yen Huang et al.   APPLIED PHYSICS LETTERS

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

(2011) Matt D. Brubaker et al.   JOURNAL OF APPLIED PHYSICS

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

(2011) Alexey E. Romanov et al.   JOURNAL OF APPLIED PHYSICS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction

(2011) Jesse R. Williams et al.   SURFACE SCIENCE

Large Interlayer Relaxation at a Metal-Oxide Interface: The Case of a Supported Ultrathin Alumina Film

(2010) Erik Vesselli et al.   PHYSICAL REVIEW LETTERS

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

(2009) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

GaN Substrates—Progress, Status, and Prospects

(2009) T. Paskova et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Reconstructions of GaN and InN Semipolar (10\bar1\bar1) Surfaces

(2009) Toru Akiyama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures

(2009) Hisashi Masui et al.   JOURNAL OF ELECTRONIC MATERIALS

Fabrication and characterization of native non-polar GaN substrates

(2008) D. Hanser et al.   JOURNAL OF CRYSTAL GROWTH

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

(2008) L Largeau et al.   NANOTECHNOLOGY