4.6 Article

GaN polarity determination by photoelectron diffraction

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APPLIED PHYSICS LETTERS
卷 103, 期 9, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4819761

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  1. Academy of Sciences of the Czech Republic [M100101201]
  2. Grant Agency of the Czech Republic [P108/12/G108]
  3. Ministry of Education, Youth, and Sports of the Czech Republic [LM2010005]
  4. NSF [DMR-1207075]

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A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1s level in the (10 (1) over bar0) plane at polar angles of 20 degrees and 25 degrees, is tested on GaN crystals. The photoelectron intensity ratio I-20/I-25 is larger or smaller than unity for GaN(0001) or GaN(000 (1) over bar), respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter. (C) 2013 AIP Publishing LLC.

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