Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel
出版年份 2014 全文链接
标题
Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 3, Pages 034505
出版商
AIP Publishing
发表日期
2014-01-17
DOI
10.1063/1.4861726
参考文献
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