Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Scaling of High-Field Transport and Localized Heating in Graphene Transistors

(2011) Myung-Ho Bae et al.   ACS Nano

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

(2011) David Jimenez et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

(2011) David Jimenez   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling of the steady state characteristics of large-area graphene field-effect transistors

(2011) S. Thiele et al.   JOURNAL OF APPLIED PHYSICS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

(2010) S. A. Thiele et al.   JOURNAL OF APPLIED PHYSICS

Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices

(2010) Myung-Ho Bae et al.   NANO LETTERS