All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces
出版年份 2013 全文链接
标题
All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 3, Pages 033709
出版商
AIP Publishing
发表日期
2013-07-19
DOI
10.1063/1.4812493
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- (2012) M. Ribeiro et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
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- (2012) Sebastian Küfner et al. PHYSICAL REVIEW B
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- (2012) Abderrezak Belabbes et al. PHYSICAL REVIEW B
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- (2011) R. R. Pelá et al. APPLIED PHYSICS LETTERS
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- (2011) A. Belabbes et al. PHYSICAL REVIEW B
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- (2011) A. Belabbes et al. PHYSICAL REVIEW B
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- (2011) Luiz G. Ferreira et al. AIP Advances
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- (2011) Lang Niu et al. Nanoscale Research Letters
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- (2008) Oliver Marquardt et al. PHYSICAL REVIEW B
- Approximation to density functional theory for the calculation of band gaps of semiconductors
- (2008) Luiz G. Ferreira et al. PHYSICAL REVIEW B
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