标题
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 84, Issue 12, Pages -
出版商
American Physical Society (APS)
发表日期
2011-09-07
DOI
10.1103/physrevb.84.125108
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
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- Polytypism of GaAs, InP, InAs, and InSb: Anab initiostudy
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- Band offsets in cubic GaN/AlN superlattices
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- Optical spectroscopy of cubic GaN in nanowires
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- Valence-band splittings in cubic and hexagonal AlN, GaN, and InN
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- (2009) Florian Werner et al. NANO LETTERS
- Ab-initiotheory of semiconductor band structures: New developments and progress
- (2009) F. Bechstedt et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Controlled polytypic and twin-plane superlattices in iii–v nanowires
- (2008) P. Caroff et al. Nature Nanotechnology
- Approximation to density functional theory for the calculation of band gaps of semiconductors
- (2008) Luiz G. Ferreira et al. PHYSICAL REVIEW B
- Band Offsets at Semiconductor-Oxide Interfaces from Hybrid Density-Functional Calculations
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