期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 21, 期 17, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/21/17/174208
关键词
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资金
- Swiss National Science Foundation
- US Office of Naval Research [N00014-08-1-4005]
- European Commission [004170]
- ArmaSuisse
We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.
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