标题
Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 3, Pages 033713
出版商
AIP Publishing
发表日期
2012-08-10
DOI
10.1063/1.4744983
参考文献
相关参考文献
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- (2012) Hyun Cho et al. APPLIED PHYSICS LETTERS
- Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy
- (2011) E. A. Douglas et al. APPLIED PHYSICS LETTERS
- Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
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- Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination
- (2011) Yoon Jang Chung et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Al2O3∕InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy
- (2011) Hyun Cho et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
- (2011) Kenji Nomura et al. JOURNAL OF APPLIED PHYSICS
- Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content
- (2011) Kyeongmi Lee et al. THIN SOLID FILMS
- Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
- (2010) Toshio Kamiya et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- First-principles study of native point defects in crystalline indium gallium zinc oxide
- (2009) Hideyuki Omura et al. JOURNAL OF APPLIED PHYSICS
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- (2009) Keisuke Kobayashi NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
- Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy
- (2008) S. C. Su et al. APPLIED PHYSICS LETTERS
- Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
- (2008) Hsing-Hung Hsieh et al. APPLIED PHYSICS LETTERS
- Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes
- (2007) Yasuhiro Shimura et al. THIN SOLID FILMS
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