A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

标题
A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 12, Pages 124115
出版商
AIP Publishing
发表日期
2011-06-30
DOI
10.1063/1.3592285

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