Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

(2011) K. Shubhakar et al.   APPLIED PHYSICS LETTERS

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

(2011) A. Bayerl et al.   MICROELECTRONIC ENGINEERING

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

(2010) Mario Lanza et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Breakdown and degradation of ultrathin Hf-based (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxide films

(2009) H. J. Uppal et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

(2008) Vasil Yanev et al.   APPLIED PHYSICS LETTERS