Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 33, Issue 6, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4933401
Keywords
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Funding
- U.S. National Science Foundation [DMR-1410888]
- NSF MRSEC [DMR-1420013]
- Samsung Scholarship Foundation, Republic of Korea
- NSF through the UMN MRSEC Program
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410888] Funding Source: National Science Foundation
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Owing to its high room-temperature electron mobility and wide bandgap, BaSnO3 has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO3 films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO3 films were thus grown on SrTiO3 (001) and LaAlO3 (001) substrates. Growth conditions for stoichiometric BaSnO3 were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of similar to 1 nm for strain relaxation was determined for films grown on SrTiO3 using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO3. (C) 2015 American Vacuum Society.
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