EFFECTS OF ARGON+ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL

Dynamics of resistance switching induced by charge carrier fluence

(2010) Gyoung-Ho Buh et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF APPLIED PHYSICS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Forming Process Investigation of $\hbox{Cu}_{x} \hbox{O}$ Memory Films

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS