Synthesis of ZnSe Nano Particles, Deposition of ZnSe Thin Films by Electron Beam Evaporation and Their Characterization

Zinc selenide (ZnSe) nano particles were synthesised by chemical route at 205 degrees C and it was confirmed by powder X-ray diffraction analysis. Utilizing the synthesised nano particles as the source material, ZnSe thin films were deposited at various substrate temperatures (Room Temperature (RT), 150 degrees C, 250 degrees C, 350 degrees C and 450 degrees C) employing electron beam evaporation method. X-ray diffraction results show that the prepared films are amorphous in nature. Raman spectral analysis confirmed the formation of ZnSe. Optical properties were studied using UV-Vis transmittance spectrum. Film prepared at RT possesses relatively high transmittance. Electrical studies carried out show that the ZnSe thin film belongs to p-type semiconductor and the film prepared at 250 degrees C exhibits a mobility of 65.8 cm(2)/Vs with the resistivity of 7.543 x 10(3) Omega cm.