4.2 Article

Structure and Properties of BT and BST Thin Films

Journal

FERROELECTRICS
Volume 453, Issue 1, Pages 113-121

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2013.842139

Keywords

Ferroelectric thin film; dielectric properties; capacitance-voltage characteristics

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Barium titanate [BT] and barium strontium titanate [BST] solid solution films have been fabricated by a modified sol-gel processing technique from barium acetate {Ba(CH3COOH)(2)}, strontium acetate [Sr(CH3COOH)(2]) and titanium (IV) Isopropoxide [Ti[(CH3)(2)CHO](4)] precursors. The as-fired films were found to be amorphous that crystallized to perovskite phase after annealing the films at 550 degrees C in air for one hour. The dielectric constant (E) and loss tangent (tan) of the BaTiO3 film at 1kHz was found to be 360 and 0.01 respectively. The dielectric constant showed a broad anomaly peak at 130 degrees C that confirms ferroelectric-paraelectric transition. The room temperature dielectric constant and loss factor of this film were found to be 450 and 0.005 respectively. The dielectric anomaly peak of the BST film was found to shift towards lower temperature with Sr content. Both BT and BST showed butterfly capacitance-voltage (C-V) and conductance-voltage (G-V) loops, confirming the existence of ferroelectricity in these films.

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