Journal
FERROELECTRICS
Volume 419, Issue -, Pages 33-38Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2011.594714
Keywords
(Ba; Sr)(Zr; Ti)O-3 thin film; dielectric; phase shifters; ring resonators
Funding
- HKSAR ITF [K-ZS0B]
- Centre for Smart Materials of the Hong Kong Polytechnic University
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(Ba0.55Sr0.45)(Zr0.1Ti0.9)O-3 (BSZT) thin films were deposited by pulsed laser deposition on LSAT(001) substrates. X-ray diffraction characterization reveals a good quality of crystallization and epitaxial nature of the films. The in-plane dielectric properties of the films were characterized over a wide frequency range from 50 MHz to 20 GHz by using ring resonator-structured samples. Based on the S-parameter measurements and electromagnetic simulation it was found that microwave dielectric constant of the BSZT thin film is similar to 350. Large dielectric tunability was also observed in this material.
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