Ab initio electronic band structure study of III–VI layered semiconductors

Performance of the modified Becke-Johnson potential for semiconductors

(2012) J. A. Camargo-Martínez et al.   PHYSICAL REVIEW B

Layered GaTe Crystals for Radiation Detectors

(2011) Krishna C. Mandal et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Ab initioguided optimization of GaTe for radiation detection applications

(2011) Cedric Rocha Leão et al.   PHYSICAL REVIEW B

Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions

(2011) D. V. Rybkovskiy et al.   PHYSICAL REVIEW B

Reliability of Hybrid Functionals in Predicting Band Gaps

(2011) Manish Jain et al.   PHYSICAL REVIEW LETTERS

Elementary energy bands concept, band structure, and peculiarities of bonding in β-InSe crystal

(2010) K. E. Glukhov et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Charge neutrality level and electronic properties of GaSe under pressure

(2010) V. N. Brudnyi et al.   SEMICONDUCTORS

AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate

(2009) B. Abidri et al.   APPLIED SURFACE SCIENCE

Above-bandgap ordinary optical properties of GaSe single crystal

(2009) S. G. Choi et al.   JOURNAL OF APPLIED PHYSICS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

Theoretical studies of defect states in GaTe

(2008) Zs Rak et al.   JOURNAL OF PHYSICS-CONDENSED MATTER