Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

Published 2010 View Full Article

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Title
Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy
Authors
Keywords
-
Journal
EUROPEAN PHYSICAL JOURNAL B
Volume 75, Issue 1, Pages 31-35
Publisher
Springer Nature
Online
2010-02-03
DOI
10.1140/epjb/e2010-00044-3

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