Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Published 2015 View Full Article

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Title
Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor
Authors
Keywords
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Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 137, Issue 21, Pages 6897-6905
Publisher
American Chemical Society (ACS)
Online
2015-05-15
DOI
10.1021/jacs.5b03151

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