1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Published 2014 View Full Article

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Title
1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C
Authors
Keywords
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Journal
ELECTRONICS LETTERS
Volume 50, Issue 20, Pages 1467-1468
Publisher
Institution of Engineering and Technology (IET)
Online
2014-09-12
DOI
10.1049/el.2014.2414

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