High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate

Published 2008 View Full Article

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Title
High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate
Authors
Keywords
-
Journal
ELECTRONICS LETTERS
Volume 44, Issue 3, Pages 240
Publisher
Institution of Engineering and Technology (IET)
Online
2008-01-31
DOI
10.1049/el:20082558

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