Article
Engineering, Industrial
Rong Yi, Jianwei Ji, Zejin Zhan, Hui Deng
Summary: This study investigates the electropolishing mechanism of tungsten in the electrolyte with H2SO4 and CH3OH. The anodic dissolution behavior of tungsten shows that anisotropic and isotropic etching occur under different polarization conditions. The experimental results demonstrate the importance of isotropic etching mode and the effect of pulse power supply on surface roughness.
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
(2022)
Article
Materials Science, Ceramics
Chen Wang, Daming Zhuang, Ming Zhao, Yuxian Li, Liangzheng Dong, Hanpeng Wang, Jinquan Wei, Qianming Gong
Summary: The research utilized Br2-CH3OH solution to etch the surfaces of CIGS films, effectively reducing surface roughness and removing Cu-Se phase, thereby improving device performance. CIGS films with suitable surface roughness efficiently absorb light, while excessive etching results in thinning of the film and increased carrier recombination at the back electrode.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Multidisciplinary
Khan Muhammad Ajmal, Rong Yi, Zejin Zhan, Jianwei Ji, Xinquan Zhang, Hui Deng
Summary: Research on the isotropic etching polishing of nickel-based superalloy Inconel 718 (IN718) found that by adjusting the electrolyte concentration and maintaining temperature, the etching anisotropy can be transformed into isotropic etching, and polishing at higher currents facilitates rapid polishing.
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Alexander B. Greenwood, Krishna C. Balram, Henkjan Gersen
Summary: In this work, evidence of a reactive ion etching process is shown, which selectively etches gold along crystalline facets, leading to smoother fabricated plasmonic devices. Further optimization of the etch chemistry holds the prospect of achieving atomic smoothness, opening up a route toward fabricating high-performance plasmonic circuits.
Article
Materials Science, Ceramics
Shih-Yung Huang, Yu-Hao Chang, Wei-Kai Wang
Summary: In this study, the Y2O3-MgO (YM) nanocomposite film was prepared using radio frequency magnetron sputtering. The film showed good chemical stability and could effectively suppress surface fluorination during plasma etching.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Physical
Seungju Seo, Sanha Kim, Shun Yamamoto, Kehang Cui, Takashi Kodama, Junichiro Shiomi, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama, A. John Hart
Summary: This paper investigates the tailored use of Ar/O-2 plasma etching to modify the surface morphology of multi-walled CNT forests, studying the effects of process parameters on the etching, as well as the influence of different initial characteristics on the etching results. The study also explores the enhancement of alignment and chemical uniformity of the top surface of CNT forests by Ar/O2 plasma.
Article
Chemistry, Physical
Yongjae Kim, Hojin Kang, Heeju Ha, Changkoo Kim, Sungmin Cho, Heeyeop Chae
Summary: This study developed a plasma atomic layer etching (ALE) process for molybdenum (Mo) using surface fluorination and ion bombardment. The Mo surface was fluorinated with CHF3 or C4F8 plasmas, and then etched with Ar plasma. The ALE process achieved a low fluorine residue (4%) and surface roughness (0.37 nm), making it superior to radical etching and RIE processes.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Fluids & Plasmas
Peng Zhang, Ruvarashe F. Dambire
Summary: This study investigates the competitive effect of edge roughness and mask pattern in the plasma etching process. The results show that different roughness and patterns significantly influence the surface distributions of electric field and etching rates on the mask surface. The shape and roughness of the pattern also affect the profile of mask holes during the etching process.
PLASMA SCIENCE & TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Nan Gao, Yuan Gao, Meng Chen, Hongtao Xu, Zhongying Xue, Xing Wei
Summary: Gas phase hydrogen chloride etching can achieve surface smoothing and thinning of the top silicon layer of SOI, with etch rate being influenced by HCl proportion and gas flow. The etch rate remains constant within a certain temperature range, and the root mean square roughness value of the etched sample can meet the requirements of CMOS applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Linfeng Zhang, Bing Wu, Yi Zhang, Hui Deng
Summary: Plasma-based atom-selective etching (PASE) is used to efficiently planarize the GaN surface. Non-toxic carbon tetrafluoride is chosen as the reaction gas for PASE, which improves the volatility of etching products. PASE of GaN reduces surface roughness from Sa 135.8 nm to Sa 0.527 nm in 2 minutes, with a material removal rate 93.01 μm/min, thousands of times higher than the conventional chemical mechanical polishing method. The crystal structure of the GaN subsurface remains intact, proving the non-destructive nature of PASE. Furthermore, the effects of radio frequency power and reaction gas flow rate on PASE are investigated.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Chemical
Evangelos Balis, Thomas B. Kaps, Sage R. Hiibel
Summary: In this study, 3D-printed meshes were developed and tested for sodium chloride crystallization. The experiments showed that higher solid salt recoveries were achieved with a mesh coverage of 52.24% and increased solution/air interfaces in contact with the meshes. Additionally, a potential mechanism explaining the salt formation from the solution/air interface towards the non-immersed portion of the mesh was developed.
SEPARATION AND PURIFICATION TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Jinhoon Lee, Junwoo Lee, Taehyeon Kim, Taegun Park, Sangwoo Lim
Summary: The oxidation and etching behaviors of InGaAs surface were studied under different levels of dissolved oxygen concentration. The results showed that higher concentration resulted in thicker oxide films, with more oxidation of indium gallium than arsenic. In weak acid solution, higher dissolved oxygen concentration led to more material loss, with the oxidation step determining the overall etching process. Low dissolved oxygen treatment improved performance by reducing defects.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Materials Science, Composites
Hammad Nadeem, Numan Ghazali, M. Nabeel, N. Ahsan, A. A. Khurram
Summary: The surface roughness of 3D printed parts with Fused Deposition Modelling (FDM) was evaluated using different materials and geometries. The roughness values were found to be higher in cube and cone samples compared to strip samples, regardless of the shape. The nozzle temperature was found to affect the surface roughness, and chemical and physical methods were used to improve the surface quality of FDM parts.
JOURNAL OF THERMOPLASTIC COMPOSITE MATERIALS
(2023)
Article
Chemistry, Physical
James Egbu, Paul R. Ohodnicki Jr, John P. Baltrus, Ahmed Talaat, Ruishu F. Wright, Michael E. McHenry
Summary: We conducted a systematic investigation on newly developed metal amorphous nanocomposites (MANCs) and studied the factors affecting their surface roughness. The analysis showed that heat treatment increased the surface roughness and thickness of the oxide layer.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Aerospace
Debby Tran, Sarah Tuttle, Kal Kadlec, Rishi Pahuja, Ali C. Jones, William Ketzeback, Russet McMillan, Amanda Townsend
Summary: This study explores a new method of fabricating slits for the KOSMOS spectrograph using nanofabrication techniques. The chemically etched reflective slits are found to have smoother surfaces and more uniform widths compared to the machined matte slits. The scattering from the etched slits is higher, but can be effectively reduced through proper background subtraction.
JOURNAL OF ASTRONOMICAL TELESCOPES INSTRUMENTS AND SYSTEMS
(2022)
