Article
Chemistry, Multidisciplinary
Karthik Krishnan, Shaikh Mohammad Tauquir, Saranyan Vijayaraghavan, Ramesh Mohan
Summary: The resistive switching behavior in polymer-based devices is influenced by different conduction mechanisms, including the reliance on aluminum electrodes and electrochemically active silver elements for resistive behavior and rapid storage switching. X-ray photoelectron spectroscopy research has revealed the formation process of conducting filaments, providing deeper insights into understanding resistive behavior in polymer-based devices through rearranging device structures.
Review
Chemistry, Multidisciplinary
Gregory Soon How Thien, Mohd Arif Mohd Sarjidan, Noor Azrina Talik, Boon Tong Goh, Boon Kar Yap, Zhicai He, Kah-Yoong Chan
Summary: This review discusses the impact of top electrode (TE) dependence on resistive switching (RS) characteristics in different materials used as potential candidates for memory devices. The relevance and importance of electrode dependence in the design of halide perovskite (HP) memories are highlighted through the exploration of electrode modification advances and techniques.
MATERIALS CHEMISTRY FRONTIERS
(2022)
Article
Chemistry, Physical
M. Asif, Ashok Kumar
Summary: The resistive random memory effect has been investigated in Pt/CaZrO3/Pt/Si thin-film device, demonstrating bipolar and unipolar resistive switching phenomena. The device exhibits good retention time and low compliance current in both BRS and URS, making it suitable for nonvolatile memories.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Fawaz Almutairi, Meshari Alotaibi, Anthony R. West
Summary: Y-doped ceria shows resistive switching under a small applied voltage, and the effect is enhanced in reduced conditions.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Haoyang Li, Weixia Lan, Xian Wu, Zhiqiang Zhu, Bin Wei
Summary: Organic resistive switching memory (ORSM) has great potential for neotype memory devices due to its simple architecture, low power consumption, high switching speed, and feasibility of large-area fabrication. This study achieved high ON/OFF ratios and outstanding device stability by doping bipolar materials into solution-processed ternary ORSM devices. The resistive switching performance was effectively improved by doping two bipolar materials in different blending concentrations, resulting in increased ON/OFF ratios and decreased operating voltages. The use of bipolar materials enhances the operation of ORSMs through energy level alignment and charge transfer.
Article
Computer Science, Information Systems
Huanmei Yuan, Tianqing Wan, Hao Bai
Summary: In this study, CBRAM devices were fabricated by using Cu as both the top and bottom electrode. The devices exhibited good bipolar resistive switching characteristics with high endurance and long retention time, when Al2O3 was used as the switching layer. Furthermore, the Cu electrode-based RRAM devices showed negative bias-suppressed complementary resistive switching characteristics, which can solve the sneak path current or crosstalk problem in high-density memory array circuits.
Article
Chemistry, Analytical
Nayan C. Das, Minjae Kim, Jarnardhanan R. Rani, Sung-Min Hong, Jae-Hyung Jang
Summary: This study presents electroforming-free resistive switching random access memory (RRAM) devices utilizing magnesium fluoride (MgFx) as the resistive switching layer, which exhibit bipolar SET/RESET operational characteristics with a high on/off ratio. The resistive switching mechanism is governed by pre-existing defects of fluoride vacancies in the MgFx layer, as well as O-H group-related defects on the surface of the active layer.
Article
Physics, Applied
Yuan Li, Zhenjun Cui, Yanwei He, Hao Tian, Tianchen Yang, Chengyun Shou, Jianlin Liu
Summary: The resistive switching properties of molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied using metal insulator metal configurations with different electrode materials. The devices show forming-free bipolar resistive switching (BRS) behavior, self-compliant current BRS characteristics, and the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Zheng Wang, Wei Xiao, Huiyong Yang, Shengjie Zhang, Yukun Zhang, Kai Sun, Ting Wang, Yujun Fu, Qi Wang, Junyan Zhang, Tsuyoshi Hasegawa, Deyan He
Summary: The deposition location of metal atoms is closely related to the crystallinity of the ion transport layer, and filament variability during different cycles and devices is the primary reason for the observed operating characteristic variability. Moreover, the evolution of the dielectric layer and metal filament must be considered for the operation of ion devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Ayoub H. Jaafar, Lingcong Meng, Yasir J. Noori, Wenjian Zhang, Yisong Han, Richard Beanland, David C. Smith, Gillian Reid, Kees de Groot, Ruomeng Huang, Philip N. Bartlett
Summary: This work presents resistive random-access memory cells fabricated using electrodeposited GeSbTe material in a crossbar architecture, showing asymmetric bipolar resistive switching characteristics and multi-state switching behavior. The switching between high-resistance and low-resistance states in these cells is attributed to the formation and rupture of conductive Te bridges within the Te-rich GeSbTe matrix under high electric field.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Engineering, Electrical & Electronic
Fang Hu, Wenjie Ming, Liu Yang, Can Huang, Hongyang Zhao, Shuhong Xie, Zhenxiang Cheng, Tingting Jia
Summary: This article investigates the resistive switching mechanism in solid solution oxides, successfully fabricating binary and ternary solid solution films with switchable polarization, weak magnetism, and reversible resistive switching effects. Multi-stage resistive switching behavior was observed, with the binary film demonstrating four resistive switching states. The dominant role of oxide vacancy/valance exchange-induced defects in the resistive switching effect of complex oxide thin films is discussed.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Asif Ali, Haider Abbas, Muhammad Hussain, Syed Hassan Abbas Jaffery, Sajjad Hussain, Changhwan Choi, Jongwan Jung
Summary: This study investigates a GeS-based CBRAM device that exhibits both T-RS and B-RS characteristics under different CC conditions, proposing a model based on the formation and rupture of conductive filaments to explain their coexistence. Additionally, the retention characteristics of the device in both T-RS and B-RS mode, as well as its potential application in brain-inspired neuromorphic systems, are explored.
APPLIED MATERIALS TODAY
(2022)
Article
Engineering, Electrical & Electronic
Dongsheng Cui, Yawei Du, Zhenhua Lin, Mengyang Kang, Yifei Wang, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang
Summary: A memory device with an Ag/Ga2O3/Pt structure has been successfully fabricated, exhibiting both bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors. It was found that the bipolar and unipolar modes can be set by applying a positive voltage with the same compliance current (I-cc) of 1 mA. The reset process involves a polarity change of sweeping voltages without I-cc to switch between the bipolar and unipolar modes. The conduction mechanisms are identified as conducting filaments (CFs) for the low resistance state (LRS), and schottky emission for BRS, and space charge limited conduction mechanism for URS in the high resistance states (HRS), respectively.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Karthik Krishnan, Agnes Gubicza, Masakazu Aono, Kazuya Terabe, Ilia Valov, Tohru Tsuruoka
Summary: The increase in relative humidity in the ambient atmosphere leads to a decrease in the operation voltage of PEO-based atomic switches. This is due to enhanced Ag oxidation rates at the anode and increased Ag+ ion conductivity, which contribute to the decreased operation voltages at higher RH levels.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Multidisciplinary
Vidit Pandey, Adiba Adiba, Tufail Ahmad, Priyanka Nehla, Sandeep Munjal
Summary: This study demonstrated the bipolar resistive switching phenomenon in Mn3O4 using an aluminium/Mn3O4/fluorine-doped tin oxide resistive random access memory (RRAM) device. It explored conduction mechanisms, thermal activation energy, and temperature coefficient of resistance, showing potential application in future high-density non-volatile memory RRAM devices.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2022)
