4.6 Article

Influences of semiconductor oxide fillers on the corrosion behavior of metals under coatings

Journal

ELECTROCHIMICA ACTA
Volume 292, Issue -, Pages 425-434

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2018.08.116

Keywords

Organic coatings; Semiconductor oxide; Localized EIS; Work function

Funding

  1. National Natural Science Foundation of China [51671047, 21703026, 21403030]
  2. National Key R&D Program of China [2016YFB0601100]
  3. General Financial Grant from the China Postdoctoral Science Foundation [2017M610177]
  4. Natural Science Foundation of Liaoning Province [2015020178]
  5. Fundamental Research Funds for the Central Universities [DUT16RC(3)106]

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Semiconductor oxides are widely used as coating fillers, while few studies have focused on the interactions between semiconductor fillers and metal substrates. In this paper, common semiconductor fillers including TiO2, Fe2O3 and Cu2O were prepared and incorporated into polyvinyl butyral coatings. Localized EIS, EIS, SEM and electrochemical noise analysis were applied to study the corrosion behavior of semiconductor/metal contacts at coating defects. Results revealed that TiO2 and Fe2O3 accelerated the corrosion of metals, while Cu2O showed no promising effect. Meanwhile, a micro-galvanic corrosion mechanism based on work function difference and oxygen reduction reaction activity was proposed to explain the corrosion-promotion phenomenon. (C) 2018 Elsevier Ltd. All rights reserved.

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