4.6 Article

Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

Journal

ELECTROCHIMICA ACTA
Volume 56, Issue 17, Pages 6245-6250

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2011.02.078

Keywords

Electroless plating; Diffusion barrier; Through-Si via; Au nanoparticle; Copper

Funding

  1. Japan Society for the Promotion of Science
  2. MEXT (Ministry of Education, Culture, Sports, Science and Technology)

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An all-wet process was achieved using electroless deposition of barrier and Cu seed layers for fabrication of a high aspect ratio through-Si via (TSV). Formation of a thin barrier metal layer of Ni-B, Co-B and Co-W-B is possible using a Au nanoparticle (AuNP) catalyst, which is densely adsorbed on the SiO2 of the TSV sidewall. A silane coupling agent of 3-aminopropyl-triethoxysilane is effective for enhancement of the density of adsorption for AuNP. A conformal electroless Cu layer is deposited on the barrier layer by displacement plating without a catalyst. The adhesion strength between the electroless barrier layer and the SiO2 substrate is increased by annealing at 300 degrees C. These results strongly suggest that an all-wet process for the formation of Cu-filled TSV with a high aspect ratio is practically possible. (C) 2011 Elsevier Ltd. All rights reserved.

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