Effects of Ozone Annealing on Solution-Processed Indium Zinc Oxide (IZO) Thin Film Transistors
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Title
Effects of Ozone Annealing on Solution-Processed Indium Zinc Oxide (IZO) Thin Film Transistors
Authors
Keywords
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Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 11, Pages H442
Publisher
The Electrochemical Society
Online
2011-09-29
DOI
10.1149/2.004111esl
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Note: Only part of the references are listed.- A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
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- (2010) K. K. Banger et al. NATURE MATERIALS
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- Toward High-Performance Amorphous GIZO TFTs
- (2009) P. Barquinha et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Fabrication of IZO transparent conducting thin films by the use of magnetron sputtering equipped with ion-beam system
- (2009) Jae-Hye Jung et al. Journal of the Society for Information Display
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- Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors
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