Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 6, Pages H198-H201Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3098405
Keywords
electrochemical electrodes; gallium compounds; II-VI semiconductors; indium; indium compounds; magnesium compounds; plastics; semiconductor doping; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds
Funding
- Seoul RBD Program [2G07270]
- KIST program [2E20792]
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We investigated indium- (In)-doping effects on the structural and electrical properties of a ZnO film. It was found that structural properties degraded as In-doping content increased, whereas electrical properties improved. We fabricated fully transparent and flexible InGaZnO4 thin film transistors (TFTs) using In-doped ZnO electrodes on polyethylene terephthalate (PET) substrate. The InGaZnO4/MgO-Ba0.6Sr0.4TiO3/3% In-doped ZnO/PET stacks exhibited a high transmittance of 80% in the visible range. The InGaZnO4 TFT with a 3% In-doped ZnO electrode showed a high field effect mobility of 1.04 cm(2)/V s and a moderate on/off ratio of 7.48x10(5).
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