Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Published 2009 View Full Article

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Title
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth
Authors
Keywords
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Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages H142
Publisher
The Electrochemical Society
Online
2009-02-13
DOI
10.1149/1.3077178
References
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